GaN is a semiconductor material of third generation with a large forbidden-band width. It has superior properties compared to first-generation Si or second-generation GaAs.
GaN devices, due to their high thermal conductivity and large band gaps, can operate at temperatures over 200 degrees C, allowing them to carry more energy and be more reliable. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the GaN device. This is good for improving the overall energy efficiency.

GaN semiconductors can therefore be designed to have a higher bandwidth, higher amplifying gain, higher energy efficiency and smaller size. These characteristics are consistent with "tonalities" in the semiconductor industry.

The base station power amplifier also uses GaN. Gallium nitride, gallium arsenide and indium phosphide are common semiconductor materials used in radio frequency applications.

GaN devices have better frequency characteristics than other high-frequency technologies such as indium phosphide and gallium arsenide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and using carrier aggregation.

Gallium nitride can achieve higher power density than silicon or any other device. GaN has a higher power density. GaN's small size is an advantage when it comes to a power level. Smaller devices can reduce device capacitance, making it easier to design higher bandwidth systems. Power Amplifiers (PA) are a critical component of the RF Circuit.

From a current application perspective, the power amplifier is mainly composed by a gallium-arsenide poweramplifier and a complementary metallic oxide semiconductor poweramplifier (CMOS PA), where GaAs is the mainstay. However, with the advent 5G, GaAs will no longer be able to maintain high levels of integration at high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means higher operating temperatures.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will be available in the second half of 2019, and by the end Christmas and the New Year. According to reports 5G technology should be up to 100 times more efficient than current 4G networks. This will allow users to reach Gigabits-per-second speeds while reducing the latency.

As well as the increase in the density and number of bases stations, there will be a large increase in RF devices. As a result, the number of RF devices required in the 5G period will increase by dozens or even hundreds of times compared to 3G and the 4G periods. Therefore, cost control and silicon-based GaN have a major cost advantage. It is possible to achieve the best cost-effective advantage with silicon-based GaN.

Commercialization of any new semiconductor technology is difficult, and this can be seen in the evolution of the last two generations. GaN, which is also in this stage at the moment, will cost more to civilians because of the increased demand for silicon-based devices, the mass production and process innovations, etc.

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